| PART |
Description |
Maker |
| RFP-10N50TV |
Aluminum Nitride Terminations
|
Anaren Microwave
|
| RFP-375375N6X50-2 |
Aluminum Nitride Terminations
|
Anaren Microwave
|
| RFP-250250N6Z50-2 |
Aluminum Nitride Terminations 16 Watts, 50ohm
|
Anaren Microwave
|
| AML1416P4511 |
Gallium Nitride (GaN)
|
Microsemi
|
| NPT35050A |
Gallium Nitride 28V, 65W RF Power Transistor
|
M/A-COM Technology Solution...
|
| NPT25100 |
Gallium Nitride 28V, 125W RF Power Transistor
|
M/A-COM Technology Solutions, Inc.
|
| NPT2022 NPT2022-15 |
Gallium Nitride 48V, 100W, DC-2 GHz HEMT
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
|
| PTN |
Wraparound Chip Resistors Thin Film Tantalum Nitride
|
Vishay
|
| MFE201 MFE202 MFE203 |
N-CHANNEL DUAL-GAE SILICON-NITRIDE PASSIVATED MOS FIELD-EFFECT TRANSISTORS
|
Motorola, Inc
|
| TCD-2008B50J-G |
Chip Terminations
|
American Accurate Components, Inc.
|
| RFP-20-50TPR |
Flanged Terminations
|
Anaren Microwave
|
| MFE211 MFE212 |
N-CHANNEL DUAL-GATE SILICON-NITRIDE PASSIVATED MOS FIELD-EFFECT TRANSISTORS N沟道双栅氮化硅钝化马鞍山场效应晶体管
From old datasheet system
|
Motorola Mobility Holdings, Inc.
Motorola, Inc.
|
